WELL-STRUCTURAL BODY OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A well-structural body of a semiconductor device is provided by shortening a whole system through the simplification of an impurity ion implantation processes. CONSTITUTION: A method of fabricating the well-structural body of the semiconductor device contains the following processes: A process to form a device isolation layer on the first semiconductor substrate; a process to form the second well through implanting the second impurity at the fixed region of the semiconductor substrate by a fixed depth; a process to form the first well at the fixed region of the first semiconductor substrate; and a process to form an impurity layer for controlling a threshold voltage on the semiconductor substrate surface of the second well field and the first well field.