发明名称 |
Method of fabricating dielectric layer |
摘要 |
A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.
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申请公布号 |
US6103567(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19990371646 |
申请日期 |
1999.08.10 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP. |
发明人 |
SHIH, WONG-CHENG;PENG, GUAN-JYE;CHAO, LAN-LIN |
分类号 |
H01L21/02;H01L21/316;H01L21/321;(IPC1-7):H01L21/336;H01L21/31;H01G4/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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