发明名称 Method of fabricating dielectric layer
摘要 A method of fabricating a dielectric layer which is application to be used in a capacitor. A first conductive layer is provided. A nitridation step is performed on the first conductive layer, so that a nitride layer is formed on a surface of the first conductive layer. A dielectric layer with a high dielectric constant is formed, followed by a thermal treatment and an oxygen plasma treatment to terminate dangling bonds of the dielectric layer. Consequently, oxygen is distributed on a surface of the dielectric layer and bonded with dangling bonds of the dielectric layer distributed on the surface.
申请公布号 US6103567(A) 申请公布日期 2000.08.15
申请号 US19990371646 申请日期 1999.08.10
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORP. 发明人 SHIH, WONG-CHENG;PENG, GUAN-JYE;CHAO, LAN-LIN
分类号 H01L21/02;H01L21/316;H01L21/321;(IPC1-7):H01L21/336;H01L21/31;H01G4/06 主分类号 H01L21/02
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