SOLID STATE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A solid state imaging device and a fabrication method thereof are provided to improve the productivity by simplifying the fabrication process. CONSTITUTION: The device includes the first and the second and the third transfer gate(32,33,34) between photo diodes(PD) on a pixel region and on a contact formation region of a peripheral region. And, an HLD(High temperature Low pressure Dielectric) film(35) is deposited to surround the transfer gates. And, a light-shielding film(37b) is formed on a light-shielding region except the photo diode among the pixel region. The thickness of the light-shielding film is about 1000 angstrom on an upper part of a region of the transfer gates and is about 4000 angstrom on other regions. And, a passivation film(40) is formed on the whole surface of the pixel region. And, a contact hole is formed between the HLD film and a planarized protection film(36) in order for a part of the transfer gates to be revealed. And an interconnection layer(37a) is formed to contact the transfer gates through the contact hole. The HLD film and the planarized protection film and the interconnection layer are stacked in sequence on a substrate(31) of the pad formation region. And, the passivation film formed with a PSiN is deposited on the interconnection layer of the contact formation region and the pad formation region, and the passivation film of the pad formation region is pad-opened in order for a region of the interconnection layer to be revealed.