| 摘要 |
PURPOSE: A method for forming a DRAM capacitor and capacitor made thereby is provided to reduce the DRAM size by formatting a memory and a processing unit on one direct panel. CONSTITUTION: A DRAM cell, N-MOSFET is constructed by formatting a source and gate electrode with adding impurities when the dielectric layer is formed a high work function material is used, and a conductive electrode layer is formed on the exposed surfaces of the device with including a drench well and then a high dielectric film, required the dielectric constant should be at least 20-30, is deposited over the conductive layer.
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