发明名称 DEVICE AND METHOD FOR TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a device and a method for treating a substrate, which can uniformly spread a chemical liquid on a substrate to be treated such as a wafer whose composition is little changed by the decomposition of the chemical liquid to prevent the chemical liquid from generating mist or evaporating on the substrate to be treated. SOLUTION: This device for treating a substrate has an outer tube nozzle 103 for discharging at least a chemical liquid, or a chemical liquid or a gas on a wafer 100, the outer tube nozzle 103 having a top plate structure 105 parallel to the wafer 100 at its tip end, and an inner tube nozzle 104 for flowing at least a chemical liquid, or a chemical liquid or a gas, wherein the inner tube nozzle is provided in the outer tube nozzle 103 and forms a double nozzle with the outside nozzle 103. The double nozzle simultaneously discharges the chemical liquid to effectively mix the processing liquid near the wafer 100 to prevent the chemical liquid from generating mist and evaporating. Also, when pure water washes the wafer, the pure water is in little contact with air. This can prevent impurities in the air from dissolving into the pure water and a water mark requiring oxygen from being generated.
申请公布号 JP2000200765(A) 申请公布日期 2000.07.18
申请号 JP19990000140 申请日期 1999.01.04
申请人 TOSHIBA CORP 发明人 MIYAZAKI KUNIHIRO
分类号 H01L21/306;B08B3/02;B08B3/04;H01L21/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/306
代理机构 代理人
主权项
地址