| 摘要 |
PURPOSE: A thin film transistor is provided to prevent or reduce hot carrier damage. CONSTITUTION: A thin film transistor(100) includes contact layers(35,36) selectively formed on a substrate(1). The contact layers(35,36) are partly covered with heavily doped layers(31,32) and a channel layer(6). In addition, lightly doped layers(33,34) may cover the contact layers(35,36). And, a gate electrode(2) is formed over the channel layer(6), whereas source/drain electrodes(3,4) are connected to the contact layers(35,36). The drain electrode(4) is further connected to a pixel electrode(9) thereon. Dual interlayer dielectric(7,8) is formed to cover or expose the underlying structure. In particular, the contact layers(35,36) laterally extend to the channel layer(6) from the heavily doped layers(31,32), and therefore provide a long path for electrons flowing from the source electrode(3) to the drain electrode(4). Accordingly, the hot carriers are widely dispersed, and thereby undesirable damage of the thin film transistor(100) by the hot carriers is prevented or reduced.
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