| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to optimize the device, by forming an I-shaped activation region, and by using a mask for a T-shaped contact plug to form a contact plug in a step. CONSTITUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an isolation layer defining an I-shaped activation region on a semiconductor substrate; forming a stacked structure composed of a gate oxidation layer, a conductor for a gate electrode and a first nitride layer, on an entire surface; forming a word line intersecting the activation region, namely, a gate electrode by patterning the stacked structure; forming a spacer on a sidewall of the gate electrode with a second nitride layer; forming a third nitride layer on a surface of the activation region in the semiconductor substrate; forming an interlayer dielectric on the entire surface; exposing the first nitride layer by planarization-etching the interlayer dielectric; forming a bit line contact hole and a storage electrode contact hole, exposing a predetermined region of the semiconductor substrate, by using the T-shaped contact mask to eliminate the interlayer dielectric of the activation region; forming a bit line contact plug and a storage electrode contact plug, burying the contact holes; and forming a bit line and a storage electrode, connected to the contact plug.
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