| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to prevent an electrical short between adjacent capacitors by hemispheric grains. CONSTITUTION: On a semiconductor substrate(1), a first oxide layer(2), a first nitride layer(3), a second oxide layer(4), and a second nitride layer are successively formed. Then, the second oxide layer(4) and the nitride layer are patterned to define capacitor regions, and contact holes are formed in the first oxide layer(2) and the nitride layer(3) to partly expose the substrate(1). Next, nitride side walls are formed on sides of the second oxide layer(4). An amorphous silicon(5) is deposited, and subsequently a spin on glass(SOG) layer is deposited thereon. The SOG layer is then removed by etch back process, and the amorphous silicon(5) on the second nitride layer is etched. Next, the second nitride layer and the side walls are all removed but the second oxide layer(4) is remained. Since the second oxide layer(4) isolates the adjacent capacitor regions, no electrical short is made by hemispheric grains(7).
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