| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element wherein a contact part to a wring, etc., is worked easily for smaller chip size. SOLUTION: In a vertical transfer resistor 5, the signal charge is transferred by a plurality of phases of transfer pulses Vϕ1, Vϕ2, Vϕ3, and Vϕ4, transfer electrodes 6B and 6A, among transfer electrodes 6A, 6B, 6C, and 6D of the vertical transfer resistor 5 provided corresponding to transfer pulses Vϕ1, Vϕ2, Vϕ3, and Vϕ4 for each phase of the plurality of phases of transfer pulses, to which the transfer pulses Vϕ1 and Vϕ2 of a part of phase are applied are extended in one side outside an imaging region around a pixel and connected to wirings 11 and 12 to which the transfer pulse is applied, and, the transfer electrodes 6D and 6C, among the transfer electrodes of the vertical transfer resistor 5, to which the transfer pulses Vϕ3 and Vϕ4 of other phase except for a part phase are applied are extended on the other side outside the imaging region and connected to wirings 13 and 14 to which transfer pulse is applied, constituting a solid-state image pickup element 1.
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