发明名称 |
Positive-working resist composition |
摘要 |
Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.1]heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
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申请公布号 |
US6077644(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19980207202 |
申请日期 |
1998.12.08 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HADA, HIDEO;SATO, KAZUFUMI;KOMANO, HIROSHI;NAKAYAMA, TOSHIMASA |
分类号 |
C07C69/013;G03F7/004;G03F7/039;(IPC1-7):G03F7/039 |
主分类号 |
C07C69/013 |
代理机构 |
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主权项 |
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地址 |
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