发明名称 |
METHOD FOR FORMING BOARDLESS CONTACT |
摘要 |
PURPOSE: A method for forming a boardless contact is provided to prevent degradation of operation speed due to an aerial capacitance. CONSTITUTION: A low dielectricity layer is formed on a lower insulation layer of a semiconductor substrate. Next, area at which a line/space pattern is formed on the low dielectricity layer is etched away. Next, a metal layer is formed on the result area. Next, the metal layer is etched until surface of the low dielectricity layer is exposed, so that the line/space pattern is formed. Next, an upper insulation layer is formed on the result area. Next, the upper insulation layer is etched so that the line/space pattern is exposed.
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申请公布号 |
KR20000033432(A) |
申请公布日期 |
2000.06.15 |
申请号 |
KR19980050282 |
申请日期 |
1998.11.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, IL GOO;HWANG, JAE SEONG;YOO, BYOUNG DEOK |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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