发明名称 METHOD FOR FORMING BOARDLESS CONTACT
摘要 PURPOSE: A method for forming a boardless contact is provided to prevent degradation of operation speed due to an aerial capacitance. CONSTITUTION: A low dielectricity layer is formed on a lower insulation layer of a semiconductor substrate. Next, area at which a line/space pattern is formed on the low dielectricity layer is etched away. Next, a metal layer is formed on the result area. Next, the metal layer is etched until surface of the low dielectricity layer is exposed, so that the line/space pattern is formed. Next, an upper insulation layer is formed on the result area. Next, the upper insulation layer is etched so that the line/space pattern is exposed.
申请公布号 KR20000033432(A) 申请公布日期 2000.06.15
申请号 KR19980050282 申请日期 1998.11.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, IL GOO;HWANG, JAE SEONG;YOO, BYOUNG DEOK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址