| 摘要 |
PURPOSE: A method for producing a semiconductor memory device is provided to increase the quality of a ferroelectric film by forming the ferroelectric film on a lower electrode having flat surface and to maintain the precis ion of alignment by flattening the materials for an upper part electrode and the ferroelectric. CONSTITUTION: A semiconductor memory device(10) contains a first interlayer insulating film(1), a diffusing area of the semiconductor device(2), a contact plug(3), a lower part electrode(4), a barrier metal of the lower part electrode(5), a second interlayer insulating film(6), a semiconductor substrate(7), a ferroelectric film(8), and an upper electrode(9). Herein, a contact hole is formed on the first interlayer insulating film after layering the first interlayer insulating film on the semiconductor substrate, and the contact plug is formed on the contact hole. And the lower part electrode is formed on the contact plug, and the second interlayer insulating film is formed for covering the lower part electrode. Herein, the second interlayer insulating film is flattened for having the same height with the second interlayer insulating film. Then, the upper electrode is formed, and the ferroelectric film is formed by patterning a ferroelectric material film by using a third mask.
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