| 摘要 |
<p>A solid-state imaging device (10) comprises a photodetector (14) formed on a substrate (12), a vertical shift register (16) formed in front of one side of the photodetector (14), a horizontal shift register (18) formed in front of another side of the photodetector (14), and a charge amplifier (20). The photodetector (14) is formed of M x N photodiodes (22), each photodiode (22) provided with a gate switch (24). Each gate switch (24) has a control end connected with the vertical shift register (16) through a gate line (26), and each gate line (26) is provided with a compensation line (26c) so that all gate lines (26) may have substantially the same capacitance. A plurality of such imaging devices (10) can easily be arranged without causing a dead zone, thus providing a larger effective area.</p> |
