发明名称 |
Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof |
摘要 |
Fluorine bearing spacers on the sidewalls of gate electrodes of a semiconductor device are provided to suppress hot carrier injection in the semiconductor device. In accordance with one embodiment of the invention, a semiconductor device is formed by forming at least one gate electrode on a surface of a substrate and forming fluorine bearing spacers on the sidewalls of the gate electrode. The fluorine bearing spacers may, for example, be formed of an NF3-doped glass material.
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申请公布号 |
US6060767(A) |
申请公布日期 |
2000.05.09 |
申请号 |
US19980183019 |
申请日期 |
1998.10.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER, MARK I.;GILMER, MARK C. |
分类号 |
H01L21/316;H01L21/336;H01L21/8238;H01L29/49;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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