发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device and a method for manufacturing the same that forms a self-aligned contact hole between two gate lines. A substrate is provided that has a first gate line formed thereon. An insulator is formed on the first gate line and substrate. Then a portion of the insulator and a portion of the first gate line is selectively removed to split the first gate line into a second gate line and a third gate line and to concurrently expose the substrate. Thus, producing a self-aligned contact hole between the second and third gate lines.
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申请公布号 |
US6060346(A) |
申请公布日期 |
2000.05.09 |
申请号 |
US19970931238 |
申请日期 |
1997.09.16 |
申请人 |
LG SEMICON CO., LTD. |
发明人 |
ROH, JAE SUNG;YANG, WOUN S |
分类号 |
H01L21/302;H01L21/28;H01L21/3065;H01L21/60;H01L21/768;H01L21/8234;H01L23/522;(IPC1-7):H01L21/823;H01L21/822;H01L21/335;H01L21/336 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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