| 摘要 |
The invention concerns a novel microelectronic component. More particularly, it concerns a method for improving the performance, in particular current gain, of a bipolar component. The method comprises a step which consists in producing NPN (or PNP) junctions, a channel effect ( MOS effect) (113, 103, 107-117, 118) along a direction substantially perpendicular to the junction planes of the doped NP or PN silicon layers (103, 117, 118), thereby causing the positive or negative charge carriers to circulate along said direction and the electric current densities to vary in the transistor volume. The invention also concerns a method for making a tetrapod microelectronic component combining the bipolar effect and the MOS effect. |
