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发明名称
METHOD FOR SIMULATING IMPURITY DIFFUSION IN SEMICONDUCTOR WITH OXIDATION
摘要
申请公布号
KR100255684(B1)
申请公布日期
2000.05.01
申请号
KR19970040290
申请日期
1997.08.22
申请人
NEC CORPORATION
发明人
SHOW, DOSHIYUKI
分类号
H01L21/316;G06F17/50;G06T17/20;H01L21/00;(IPC1-7):H01L21/22
主分类号
H01L21/316
代理机构
代理人
主权项
地址
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