| 摘要 |
PROBLEM TO BE SOLVED: To allow carrier to pass through a quantum dot part normally by preparing a quantum dot structure by self organization growth of crystal, annealing it and making a quantum well disappear. SOLUTION: An n-type GaAs layer 12 and a non-doped GaAs layer 13 are formed on a GaAs board 11 and etched by using SiO2 14 as a mask, a bottom of a TSR groove 15 is formed to almost a circumscribed equilateral triangle to a circular opening part formed in a mask, and a depth of a groove is the size of an opening part and is almost accurately regulated. When a non-doped GaAs layer 16 and a non-doped InGaAs layer 17 and a non-doped GaAs layer 18 are formed one by one, a quantum dot 19 is formed in a tip part of the TSR groove 15, a quantum well 20 is formed in a 111} A surface, and a quantum well (quantum fine line) is formed along a ridge. Therefore, since a quantum well 20, etc., which are incidental to a quantum dot 19 are made to disappear by annealing treatment, characteristic of a quantum dot itself can be obtained when a voltage is applied between electrodes. |
