Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy

摘要

A system for determining one or more critical dimension(s) of a semiconductor structure comprising a scanning electron microscope and a parallel distributed process operationally connected to an output of a scanning electron microscope. Said parallel distributed process containing coefficients that provide a multi dimensional mapping space for the output of said scanning electron microscope to map to an output value that provides information on the dimensions of the semiconductor structure.