HIGH PERFORMANCE MOS TRANSISTOR AND MANUFACTURING METHOD FOR THE MOS TRANSISTOR

摘要

PURPOSE: A high performance MOS(metal oxide semiconductor) transistor and manufacturing method for the MOS transistor are provided to prevent the short channel effect and to reduce the junction capacitance of source/drain areas. CONSTITUTION: A high performance MOS transistor comprises a first conductive type well region(7a), a gate oxide film(13), a gate electrode(15), a second conductive type high density source/drain area(21), and a second conductive type low density source/drain area(7a). The gate electrode is formed on the gate oxide film formed on the well region. The second source/drain area is inserted between the bottom of the first source/drain area and the well region and is doped with lower density than that of the first area.