| 摘要 |
PROBLEM TO BE SOLVED: To reduce the metal film plug loss after polishing by providing a first conductive layer at the bottom faces and side walls of openings of a first insulation film, second conductive layer buried in the first conductive layer so as to be higher than the first insulation layer surface, and wiring layer formed through a second insulation layer on the first insulation and second conductive layer. SOLUTION: A first layer insulation film 2 of SiO2, etc., is formed on the entire Si substrate 1 with elements, etc., previously formed thereon, a resist is coated and processed entirely at specified positions on the first layer insulation film 2, specified parts of the first layer insulation film 2 are etched through a mask of a resist opened according to the shape of contact holes 7 of an opening pattern wherein the connection to the Si substrate 1 uses an impurity- diffused layer formed in the substrate, the resist is removed, Ti of an Ohmic layer of an adhesion layer 3 and TnN of a barrier layer are deposited by a CVD method, a metal (W) film deposited on the entire surface of the first layer insulation film 2 is etched back, and the adhesion layer 3 surface of the W film 4 is exposed and lowered below the height of the adhesion layer 3 on the contact holes 7.
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