Method of forming an interconnection in a contact hole in an insulation layer over a silicon substrate,申请号GB19970013734-传众专利搜索

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发明名称	Method of forming an interconnection in a contact hole in an insulation layer over a silicon substrate
摘要
申请公布号	GB2314681(B)	申请公布日期	2000.04.05
申请号	GB19970013734	申请日期	1997.06.27
申请人	* NEC CORPORATION	发明人	TOSHIKI * SHINMURA
分类号	H01L21/285;H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/285	主分类号	H01L21/285
代理机构		代理人
主权项
地址

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