发明名称 METHOD FOR CLEAVING SEMICONDUCTOR LASER SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method for cleaving a semiconductor laser substrate by which cleaving failure such as chipping or cracks can be eliminated. SOLUTION: A scribing is given in the cleaving direction of a laser substrate at least on one end part of a laser substrate 1 provided with a laser crystal 3 including light emitting layers P1, P2 and P3 formed on a substrate 2, and the laser substrate 1 is cleaved and separated along the cleaving groove caused by the scribing, so as to manufacture a laser bar 12, and further scribings 111, 112 and 113 are given on one end part 12a of each laser bar 12 in the orthogonal direction to the cleaving direction, and the laser bar 12 is cleaved and separated along a cleaving groove V0 caused by the scribings 111, 112 and 113. Thus the laser substrate 1 is cleaved and separated so as to form a plurality of laser elements 16, and the scribings 111, 112 and 113 are formed by etching until they reach the substrate 2 from the side of laser crystal 3.
申请公布号 JP2000091706(A) 申请公布日期 2000.03.31
申请号 JP19980262750 申请日期 1998.09.17
申请人 VICTOR CO OF JAPAN LTD 发明人 OTSUKA TAKEO
分类号 H01L21/306;H01S5/00;H01S5/323;(IPC1-7):H01S5/323 主分类号 H01L21/306
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