| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of voids in an aperture, obtaining excellent adherence of a metal film and a barrier metal film, and increasing controllability of the growth time of the metal film, by growing the metal film in the aperture by a vapor growth method after nucleuses of metal are grown in the bottom of the aperture and on insulating films by light irradiation. SOLUTION: Metal nucleuses 22 are grown in the bottom part of an aperture and on insulating films 17, 18 in an atmosphere of metal seed source gas. After that, a metal film 23 is grown in the aperture by a vapor growth method. In the case that the diameter of the aperture is small and the depth of the bottom part is deep, the growth speed of the metal film 23 in the bottom part of the aperture in which the metal nucleuses 22 exist becomes high, the metal film 23 becomes thick, and the aspect ratio becomes small, so that voids are not generated in the metal film 23 in the aperture. Adherence of the metal film 23 and a barrier metal film under the metal film 23 is improved by the metal nucleuses 22. On account of existance of the metal nucleuses 22, growth of the metal film 23 becomes easy, and the metal film growth time can be shortened.
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