| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a flash memory, or the like, having a current sense type amplifier in which access time is shortened under read mode. SOLUTION: The flash memory, or the like, comprises a memory array MARY having a bit line B0, or the like, being connected selectively with a two layer gate structure type memory cell MC supplying a read current Ir of different value depending on the logical value of a sustaining data, a specified inner node n1 provided in correspondence with the bit line B0 or a common data line D0 being connected selectively therewith and brought into connection state selectively with the bit line B0 or the common data line D0, charge MOSFETs P1, P2 for charging the inner node n1, the common data line D0, or the like, and a current sense type sense amplifier USA0 having a predetermined logical threshold and including a logical gate, e.g. an NOR gate NO1, for determining the level of the inner node n1, wherein the gate oxide film of MOSFETs P5, N5, and the like, constituting the charge MOSFETs P1, P2 or the NOR gate NO1 is made thicker as compared with other general MOSFETs.</p> |
