发明名称 |
Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
摘要 |
In a method of producing an ohmic contact (5) to a p-type alpha -SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said alpha -SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide.
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申请公布号 |
US6043513(A) |
申请公布日期 |
2000.03.28 |
申请号 |
US19980151277 |
申请日期 |
1998.09.11 |
申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON |
发明人 |
KRONLUND, BERTIL |
分类号 |
H01L21/28;H01L21/04;H01L21/203;H01L29/24;H01L29/45;H01L29/861;(IPC1-7):H01L31/031;H01L29/74 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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