DOUBLE-PULSE LASER CRYSTALLISATION OF THIN SEMICONDUCTOR FILMS

摘要

A laser crystallisation method comprises the steps of providing a film (51) of semiconductor material on an insulating substrate, and scanning a pulsed laser beam over the film, the laser beam being shaped to define a chevron (2). Each pulse of the laser beam comprises at least a first pulse portion (30) of a first energy and a second subsequent pulse portion (34) of a second energy preferably lower than the first one. The first and second pulse portions of each pulse are applied at substantially the same positionover the film (51). This method is used to form electronic devices and enables reliable crystallisation to form large single crystal areas in thin semiconductor films (51) especially of amorphous Si for TFT devices.