| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a problem associated with undesirable reflection by effectively controlling the intensity of the reflected ray to be encountered in the execution process of a photolithography method by using a guide material antireflection coating (DARC) layer. SOLUTION: The DARC layer 32 is formed by plasma CVD using SiH4 and H2O deposited by evaporation on a primer coating layer 31 as reactetants. The DARC layer 32 is composed of an SixOyNz material. If the compsn. of the DARC layer 32 is achieved by changing the amts. of the material compsn. (x, y, z) by regulation of the flow rate and processing time of reactive gases during the time of the plasma CVD, optical interference is eventually induced when the incident ray transmits the DARC layer 32 and the reflection is lessened to the max. possible extent. In such a case, the inlet of the incident ray 40 eventually forms a reflected ray 43 and a reflected ray 44. Similarly, the DARC layer 32 gives rise to absorption and phase fluctuation in the reflected ray 44 and as a result thereof, the phase fluctuation does not eventually occur when the reflected ray 44 is coupled to the reflected ray 43. |
