| 摘要 |
PURPOSE: A precursor is provided which has a high thermal stability not containing fluorine and can prepare high quality copper thin film at low temperature of vapor deposition. CONSTITUTION: (Alkyl 3-oxobutanoate)Cu(trialkyl phosphite) compound indicated (R4COOCHCOR5)Cu{P(OR1)(OR2)(OR3)}(R1, R2, R3, R4 and R5 ate independently C1- C4 alkyl) is synthesized by the reaction of sodium alkyl 3-oxobutanoate and trialkyl phosphite binder of copper chloride(1). For example, 1.04 g of trimethyl phosphite and 0.79g of copper chloride(1) are reacted at room temperature for 15 minutes in 25ml diethyl ether, cooled to -78 degree C, followed by addition of 1.56g sodium t-butyl oxobutanoate. Obtained reactant is cooled to room temperature for 4 hours, and added 25ml pentane to give (t-butyl oxobutanoate)Cu(trimethyl phosphite).
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