METHOD OF FORMING BPSG PATTERN FOR MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PURPOSE: Between the process of the BPSG (born phosphorus silicate glass) which is usually used as IMD (inter metal dielectric) on the semiconductor board and the process of the reflow, the OH (hydroxyl) is formed on the BPSG layer because of exposure to the air. The BPSG pattern processing is provided to prevent the swelling in the process of the photo etching. CONSTITUTION: After the processing of the BPSG layer, the reflow is processed at a high temperature to flatten the surface. The cooling is processed in the air, when the oxidized layer is formed on the BPSG. This oxidized layer prevents hydroxyl to be formed on the BPSG. After the cleaning, HMDS (hexamethyldisilazane) is formed and the photo etching is processed. Thus blocking the formation of hydroxyl prevents the swelling by the oxidized layer formed on the BPSG in the process of cooling after reflow.