| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device containing a resistance layer which can arbitrarily change a sheet resistance value, and to provide the manufacture method of the pertinent device. SOLUTION: In a semiconductor device 10 provided with a substrate 1, a cap layer 2 formed on the substrate 1 and circuit elements 3 formed on the substrate 1, the cap layer 2 has a lattice structure 5 formed by stacking semiconductor layers 41-46, in which the impurities of a plurality of layers are having doped. The thickness of the cap layer 2 can be made small with good controllability, by inserting layers of different etching selection rates in the cap layer 2. Thus, by using the cap layer, where sufficient doping is executed to the degree that ohmic contact can be taken high cap layer resistance is obtained.
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