SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a trench separation and its production method are provided to have the high insulating property, to be suited to the slimming, and to prevent the leakage current. CONSTITUTION: Because a polysilicon layer(3) is formed between a semiconductor substrate(1) and a CVD silicon oxide film(4), the semiconductor device is relieved the stress by being a stress relieving film to absorb a mechanical stress generated between the semiconductor substrate(1) and the CVD silicon oxide film(4) at a heat process by transforming the structure of a film by a polysilicon grain. Therefore the insulating property of a trench separation formed by the CVD silicon oxide film suited to the miniature of the device is improved.