发明名称 PRODUCTION OF COMPOUND METAL OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a low-cost compound metal oxide film by which the increase of the rate of film formation, the densification of a film and heat treatment after film formation are made unnecessary. SOLUTION: A pair of electrodes is immersed in a heated aq. soln. of a metal hydroxide in an autoclave. The surface of at least one of the electrodes comprises a metal element B other than the metal element A forming the metal hydroxide. A voltage is then impressed on the electrodes, the polarity of the impressed voltage is inverted at least one time and the objective multiple metal oxide film consisting of the metal elements A and B is formed on the surface of the metal element B.
申请公布号 JP2000054192(A) 申请公布日期 2000.02.22
申请号 JP19980219319 申请日期 1998.08.03
申请人 NGK INSULATORS LTD 发明人 FUJITA YASUSHI;ASAI NOBUAKI;TSUCHIYA RYUJI;HIRAI SHU;ITO TAKESHI;TAKAKUWA ISAO
分类号 C25D9/06;(IPC1-7):C25D9/06 主分类号 C25D9/06
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