METHOD FOR ADJUSTING A THRESHOLD VOLTAGE OF A FLASH MEMORY APPARATUS

摘要

PURPOSE: A method for adjusting a threshold voltage of a flash memory apparatus is provided, which can adjust a threshold voltage of a reference cell which is provided to a flash memory apparatus. CONSTITUTION: A method for adjusting a threshold voltage of a flash memory apparatus comprises the steps of: (S102)(S104) providing a first and a second control voltages to a first and a second pads to program a threshold voltage of a reference cell to a certain target voltage; (S106) judging as whether the threshold voltage of the reference cell is identical to the target voltage; (S108)(S112) outputting a path signal when the threshold voltage of the reference cell is identical to the target voltage and setting the second control signal as the ground voltage level for preventing a reprogram operation of the reference cell. Therefore, an adjusting time of the threshold voltage of the reference cell can to be shortened because of a panel-test in a wafer process.