| 摘要 |
In a method of manufacturing a semiconductor substrate, a first stage semiconductor substrate wafer is cut out from an ingot. Then, a chemical mechanical polishing process is performed to the first stage semiconductor substrate wafer to produce a second stage semiconductor substrate wafer respectively having mirror surfaces on front and rear surfaces of the second stage semiconductor substrate wafer. Subsequently, a third stage semiconductor substrate wafer is produced from the second stage semiconductor substrate wafer without performing an additional chemical mechanical polishing process, to have a blocking film on the rear surface and a mirror surface on the front surface. Finally, an epitaxial layer is grown on the front surface of the third stage semiconductor substrate wafer.
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