| 摘要 |
<p>A semiconductor position sensor which can be made to operate as a PSD or a two-piece PD according to the control of cut-off/connection of base conductive layers (2-1, 2-2) by the control of the potential of a gate electrode (11). When using the semiconductor position sensor, no PD separate from a PSD is required. Therefore, the size of the position sensor can be reduced, and the whole signal light can be received by the photodetecting face, improving the sensitivity.</p> |
