| 摘要 |
A process for anisotropically etching a metal-containing layer 15 on a substrate 10 is described. The etching process uses an energized process gas of a comprising halogen-containing etchant gas for etching the metal-containing layer to form volatile metal compounds, and hydrocarbon inhibitor gas having a carbon-to-hydrogen ratio of from about 1:1 to about 1:3, to deposit inhibitor on etched metal features and provide anisotropic etching. More preferably, the hydrocarbon inhibitor gas comprises a high carbon-to-hydrogen ratio of from about 1:1 to 1:2.
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