FABRICATION OF GAN QUANTUM DOT STRUCTURE AND USE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a new GaN quantum dot structure having a process simplified as compared with a conventional method and applicable to fabrication of semiconductor light emitting element. SOLUTION: Surface state of the upper surface (base surface) of a base layer B composed of a GaN material is varied by an antisurfactant S and a GaN material having composition of three components and specific lattice matching performance is supplied to the base surface as a material gas (a) by vapor phase growth. Consequently, quantum dots (d) of a GaN material having compositional ratio different from that of the supplied GaN material are distributed on the base surface, and a cap layer C of a GaN material having compositional ratio identical to that of the supplied GaN based material is grown on the base surface while embedding the quantum dots (d) thus attaining a GaN quantum dot structure.