| 摘要 |
PURPOSE:To prevent the exfoliation of a photo-resist in post-processes by immersing a wafer in an acidic solution just before the photo-resist is applied onto the wafer. CONSTITUTION:An oxide film 2 is formed onto the surface of the wafer 1. The wafer 1 is immersed in the mixed liquid of ammonia and hydrogen peroxide, washed by water and dried. The wafer is immersed in the acidic aqueous solution, washed by water and dried. The photo-resist 3 is applied. The wafer is developed through selective exposure. Accordingly, the exfoliation of the photo- resist can be prevented in the post-photo-resist processes. |
