| 摘要 |
A sub-atmospheric chemical vapor deposition ("SACVD") system with a bypass from a dopant source to an exhaust system and related methods and devices. The flow of dopant may be established by dumping the dopant flow directly to the foreline of a vacuum exhaust system of an SACVD system, rather than flowing the dopant through the chamber. Establishing the dopant flow in this manner prior to the deposition of a silicon glass film on a substrate allows the initial portion of the silicon glass film to be doped at a higher level. Prior apparatus resulted in a dopant-deficient region of silicon glass formed before the dopant was fully flowing. In one embodiment, a doped silicon glass film is used as a dopant source for a semiconductor material, in another embodiment, a multi-layer doped silicon glass film achieves superior reflow. |
