发明名称 CHEMICALLY AMPLIFIED PHOTORESIST
摘要 <p>Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.</p>
申请公布号 WO1994010608(A1) 申请公布日期 1994.05.11
申请号 US1993010512 申请日期 1993.10.29
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