| 摘要 |
PROBLEM TO BE SOLVED: To form an under contact from the first wiring layer at the same time by the same mask, in a DRAM adopting self align contact structure. SOLUTION: For example, an insulating film 18, which covers the topside of the on-field gate electrode 19' made on the insulating film 12 for element isolation of, for example, a peripheral circuit, is removed in advance. This way, a contact hole 26, which reaches the on-field gate electrode 19', is opened in a self alignment manner to the gate electrode 19'. By doing it this way, it becomes possible to open a contact hole 26, which reaches the on-field gate electrode 19', together with a contact hole 24 reaching the diffusion layer 20a of the memory cell part and a contact hole 25 reaching the diffusion layer 20b of the peripheral circuit part, with one sheet of resist pattern 23. |
