| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a plasma etching electrode, which prevents metal contamination of a silicon wafer to raise the yield of the production of a semiconductor integrated circuit and especially can accurately select the plasma etching electrode, which is able to significantly reduce the yield of the production of the circuit, immediately after the use of a new plasma etching electrode has started. SOLUTION: A plasma etching electrode 6 is formed into a structure, wherein a part which is consumed with a plasma of the electrode 6 consists of a glassy carbon layer of Fe concentration of 1×10<3> counts or less as measured by secondary ion mass spectrometry. An evaluation method of this plasma etching electrode is such that the evaluation of a plasma etching device, which is constituted of this plasma etching electrode, and a plasma etching electrode made of a glassy carbon layer, is made by measuring the Fe concentration by a secondary ion mass spectrometry. |
