Semiconductor device production process especially for producing a conductive structure e.g. a silicide electrode or connection for a MOS transistor

摘要

A semiconductor device production process comprises treating a silicon layer (3) with an oxidizing chemical to form a thin silicon oxide layer (4) prior to forming a silicide layer (5). An Independent claim is also included for a semiconductor device produced by the above process or having the layers described above. Preferred Features: The oxidizing chemical comprises one or more of a sulfuric acid solution, a nitric acid solution, a hydrogen peroxide solution and ozone water, optionally combined with a non-oxidizing chemical such as ammonia solution.