发明名称 |
Method of forming a lift-off layer having controlled adhesion strength |
摘要 |
A method of fabricating an emitter plate 12 for use in a field emission device comprising the steps of providing an insulating substrate 18 and forming a first conductive layer 13 on the insulating substrate 18. This is followed by the steps of forming an insulating layer 20 on the first conductive layer 13 and forming a second conductive layer 22 on the insulating layer 20. Then, a plurality of apertures 34 are formed through the second conductive layer 22 and through the insulating layer 20. A lift-off layer 36 is then formed on the second conductive layer 22. The lift-off layer 36 is formed by a plating process wherein the plating bath has a pH between 2.25 and 4.5, and current densities of 1 to 2O mA/cm2. The method may further comprise depositing conductive material through the plurality of apertures 34 to form a microtip 14 in each of the plurality of apertures 34. The excess deposited conductive material 14' and the lift-off layer 36 are then removed from the second conductive layer 22.
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申请公布号 |
US5944975(A) |
申请公布日期 |
1999.08.31 |
申请号 |
US19970788149 |
申请日期 |
1997.01.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WILSON, ARTHUR M.;SHEN, CHI-CHEONG;RAMAMURTHI, SAROJA |
分类号 |
C23C28/00;C25D5/02;C25D5/10;C25D5/54;(IPC1-7):C25D5/02 |
主分类号 |
C23C28/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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