发明名称 SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To eliminate the difference in temperature dependence between an internal power-supply voltage generated by a direct feedback-type step-down circuit and an internal power-supply voltage generated by a voltage dividing-type step-down circuit. SOLUTION: In a device, a reference voltage Vref1 which is used by a direct feedback-type step-down circuit 1b is divided by a resistance dividing circuit 4b whose voltage dividing ratio is identical to the voltage dividing ratio of a voltage dividing circuit 1cb provided in a voltage dividing-type step-down circuit 1c, and it is used as a reference voltage for the voltage dividing-type step-down circuit 1c. Gy a differential amplifying operation in comparators 1ba, 1cc, the temperature dependent characteristic of the resistance dividing circuit 4b and the voltage dividing circuit 1cb is offset, and the temperature dependent characteristic of internal power-supply voltages (VIN1, VIN2) becomes identical.</p>
申请公布号 JPH11213664(A) 申请公布日期 1999.08.06
申请号 JP19980011059 申请日期 1998.01.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAZAKI KYOJI
分类号 G11C11/413;G05F1/46;G05F3/24;G11C11/401;G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/413
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