发明名称 |
SUBSTRAT COMPLIANT EN PARTICULIER POUR UN DEPOT PAR HETERO-EPITAXIE |
摘要 |
<p>The invention concerns a compliant substrate (5) comprising a support (1) and at least a thin layer (4), formed at the support surface and designed to receive, integrally, a structure causing stresses. The support (1) and the thin layer (4) are linked to each other by linking means (3) such that the stresses caused by said structure are wholly or partially absorbed by the thin layer (4) and/or by the linking means (3) which comprise at least a linking zone selected among the following linking zones: a layer of microcavities and/or a bonding interface whereof the bonding energy is controlled to enable absorption of said stresses.</p> |
申请公布号 |
FR2774511(A1) |
申请公布日期 |
1999.08.06 |
申请号 |
FR19980001061 |
申请日期 |
1998.01.30 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ASPAR BERNARD;BRUEL MICHEL;JALAGUIER ERIC;MORICEAU HUBERT |
分类号 |
H01L21/02;H01L21/20;H01L21/265;H01L21/762;H01L27/12;(IPC1-7):H01L23/14 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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