FORMATION OF SEMICONDUCTOR THERMAL DIFFUSION LAYER

摘要

PROBLEM TO BE SOLVED: To provide a technique of buried layer formation using Sb as well as a manufacturing method of efficiently forming an Sb diffusion source while suppressing a defective Si oxide film on an Si substrate. SOLUTION: A sputtered thin film 9 made of glass containing a second conductivity type impurity is formed on a substrate surface 1 as a second conductivity type impurity diffusion source when a second conductivity type film is formed by thermal diffusion on the surface of a first conductivity type substrate by selectively removing a mask layer formed on the substrate surface 1. Then, a glass layer 10 containing the second conductivity type impurity is formed on the surface of the sputtered thin film 9 to be heated so as to diffuse the impurities in the semiconductor for the formation of a second conductivity type diffused layers 2.