| 摘要 |
PROBLEM TO BE SOLVED: To prevent diffusion or deactivation of acid generated between exposure intervals for providing simultaneously good resolution and dimensional controllability for both the optical and electron beam exposure patterns. SOLUTION: In the pattern formation method for transferring a pattern to a chemically-sensitized resist formed on a wafer 5 and having a sensitivity to light and charged-particle beams by the use of both the light beam exposure and charged-particle beam exposure using a photomask, the light beam exposure of the wafer 5 is carried out with the use of the photomask to perform first heating over the resist on the wafer 5, the charged-particle exposure is carried out over the wafer 5 subjected to the first heating to perform second heating over the resist on the wafer 5, and then the wafer 5 subjected to the second heating is developed. |
