| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which make compatible increase in the capacity of a capacitor and reduction in the number of processes with each other. SOLUTION: A phosphorus-doped polycrystalline silicon film 101 is formed on a P-type silicon substrate 1, and a resist film 102 is formed on the film 101 to pattern the outer periphery of the film 102 through dry etching of the film 101. The dry etching of the film 101 is continued using a deposition film 103, which is formed on the outer periphery part of the film 102 at the time of the patterning of the outer periphery of the film 102 as a mask, and a recessed part is formed in the center of the film 101 being patterned. After that, the film 103 is removed, and a silicon nitride film 14 and a polycrystalline silicon film 25 are formed on the film 101. As a result, a cylindrical capacitor structure is formed which has the film 4 interposed between a first electrode consisting of the patterned film 101 and a second electrode consisting of the film 25. |
